PROFET® Data Sheet BTS660P
Smart Highside High Current Power Switch
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
Vbb(AZ)
70
V
VON(CL)
62 V
Vbb(on) 5.0 ... 58 V
RON
9 mΩ
IL(ISO)
44
A
IL(SC)
90
A
IL : IIS
13 000
TO 220-7SMD
7
Application
• Power switch with current sense diagnostic
feedback for up to 48 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
1
7
1
SMD
Standard
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
R
Voltage
source
Voltage
sensor
Overvoltage
Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
3
IN
Logic
ESD
I IN
Limit for
unclamped
ind. loads
Output
Voltage
detection
+ V bb
bb
OUT
1,2,6,7
IL
Current
Sense
Load
Temperature
sensor
IS
PROFET
I IS
Load GND
5
VIN
V IS
R
IS
Logic GND
1
)
)
2
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1
2003-Oct-01
Data Sheet BTS660P
Pin
Symbol
Function
1
OUT
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
3
especially in high current applications! )
2
OUT
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications! 3)
3
IN
I
Input, activates the power switch in case of short to ground
4
Vbb
+
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the Vbb connection
4
instead of this pin ).
5
IS
S
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
6
OUT
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications! 3)
7
OUT
O
Output to the load. The pins 1,2,6 and 7 must be shorted with each other
especially in high current applications! 3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (over voltage protection see page 4)
Supply voltage for full short circuit protection,
(EAS limitation see diagram on page 10)
Tj,start =-40 ...+150°C:
Load current (short circuit current, see page 5)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI5) = 2 Ω, RL = 0.23 Ω, td = 200 ms,
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 6 mH, 0 Ω, see diagrams on page 10
Electrostatic discharge capability (ESD)
Symbol
Vbb
Vbb
Values
62
58
Unit
V
V
self-limited
A
80
V
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
170
°C
EAS
1.2
J
VESD
4.0
kV
+15 , -250
+15 , -250
mA
IL
6
VLoad dump )
W
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Current through input pin (DC)
Current through current sense status pin (DC)
IIN
IIS
see internal circuit diagrams on page 7 and 8
)
3
)
4
)
5
)
6
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current
capability and decrease the current sense accuracy
Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the RON if the pin is used instead of
the tab.
RI = internal resistance of the load dump test pulse generator.
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
Page 2
2003-Oct-01
Data Sheet BTS660P
Thermal Characteristics
Parameter and Conditions
Symbol
7
chip - case: RthJC )
junction - ambient (free air): RthJA
SMD version, device on PCB 8):
Thermal resistance
min
----
Values
typ
max
-- 0.75
60
-33
--
Unit
K/W
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL = 20 A, Tj = 25 °C:
VIN = 0, IL = 20 A, Tj = 150 °C:
IL = 80 A, Tj = 150 °C:
Vbb =6V, IL =20A, Tj =150°C:
9)
Nominal load current (Tab to pins 1,2,6,7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 10)
Nominal load current 9), device on PCB 8)
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13
VON = 1.8 V, Tc = 150 °C:
11)
Turn-on time
IIN
to 90% VOUT:
to 10% VOUT:
Turn-off time
IIN
RL = 1 Ω , Tj =-40...+150°C
Slew rate on 11) (10 to 30% VOUT )
RL = 1 Ω
Slew rate off 11) (70 to 40% VOUT )
RL = 1 Ω
Values
min
typ
max
RON(Static)
IL(ISO)
38
7.2
14.6
-17
44
IL(NOM)
9.9
11.1
--
A
IL(Max)
---
---
A
ton
toff
185
105
50
30
---
400
110
µs
dV/dton
1.0
1.5
2.2
V/µs
-dV/dtoff
1.1
1.9
2.6
V/µs
RON
--
Unit
9
17
17
22
--
mΩ
A
)
7
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9)
not subject to production test, specified by design
10)
TJ is about 105°C under these conditions.
11)
See timing diagram on page 14.
)
8
Infineon Technologies AG
Page 3
2003-Oct-01
Data Sheet BTS660P
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C: RON(inv)
see diagram on page 10
Tj = 150 °C:
Nominal inverse load current (Pins 1,2,6,7 to Tab)
IL(inv)
VON = -0.5 V, Tc = 85 °C
Drain-source diode voltage (Vout > Vbb)
-VON
IL = - 20 A, IIN = 0, Tj = +150°C
Operating Parameters
Operating voltage (VIN = 0) 12)
Under voltage shutdown 13)14)
Under voltage start of charge pump
see diagram page 15
Over voltage protection 15)
Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
Standby current
Tj =-40...+25°C:
IIN = 0, Vbb=35V
Tj = 150°C:
Values
min
typ
max
9
17
--
mΩ
50
7.2
14.6
60
--
0.6
0.7
mV
Vbb(on)
VbIN(u)
5.0
1.5
-3.0
58
4.5
V
V
VbIN(ucp)
VbIN(Z)
3.0
68
70
---
4.5
-72
15
25
6.0
--25
50
V
V
Ibb(off)
--
Unit
A
µA
) If the device is turned on before a V -decrease, the operating voltage range is extended down to VbIN(u).
bb
For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit.
13)
not subject to production test, specified by design
14)
VbIN = Vbb - VIN see diagram on page 15. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
15)
See also VON(CL) in circuit diagram on page 9.
12
Infineon Technologies AG
Page 4
2003-Oct-01
Data Sheet BTS660P
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Protection Functions16)
Short circuit current limit (Tab to pins 1,2,6,7)
VON = 24 V, time until shutdown max. 300 µs
Tc =-40°C:
see page 8 and 13
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC) 17)
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
--50
90
90
80
180
---
A
td(SC)
80
--
350
µs
VON(CL)
62
65
72
V
VON(SC)
Tjt
∆Tjt
-150
--
6
-10
----
V
°C
K
--
--
42
V
--
8.8
--
10.5
20
mΩ
90
105
120
125
135
150
Ω
Reverse Battery
Reverse battery voltage 18)
-Vbb
On-state resistance (Pins 1,2,6,7 to pin 4) Tj = 25 °C: RON(rev)
Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C:
Integrated resistor in Vbb line
Unit
IL(SC)
IL(SC)
IL(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
Short circuit shutdown detection voltage 17)
Values
min
typ
max
Tj = 25 C: Rbb
Tj =150°C:
16
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions
are not designed for continuous repetitive operation.
17)
not subject to production test, specified by design
18)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To
reduce the power dissipation at the integrated Rbb resistor an input resistor is recommended as described
on page 9.
Infineon Technologies AG
Page 5
2003-Oct-01
Data Sheet BTS660P
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS,
VON < 1.5 V 19),
VIS 4.0 V
see diagram on page 12
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
--
15 400
14 600
14 200
16 000
15 000
14 500
17 000
15 500
15 000
22 000
18 500
16 000
--
6.5
--
--
mA
---
-2
0.5
65
µA
68
70
--
-72
--
--500
V
µs
IIN(on)
--
0.8
1.5
mA
IIN(off)
--
--
80
µA
IIS,lim
Current sense leakage current
IIN = 0 IIS(LL)
VIN = 0, IL < 0: IIS(LH)
Current sense over voltage protection Tj =-40°C: VbIS(Z)
Ibb = 15 mA
Tj = 25...+150°C:
20)
Current sense settling time
ts(IS)
Input
Input and operating current (see diagram page 13)
Unit
11 400
11 400
11 000
11 000
11 000
11 000
10 500
10 500
11 000
9 000
10 000
10 800
--
IL = 80 A,Tj =-40°C: kILIS
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIN = 0, IIS=0 (e.g. during deenergizing of inductive loads):
Sense current saturation
Values
min
typ
max
IN grounded (VIN = 0)
Input current for turn-off 21)
)
19
If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
20)
not subject to production test, specified by design
21)
We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Infineon Technologies AG
Page 6
2003-Oct-01
Data Sheet BTS660P
Truth Table
Input
current
Output
Current
Sense
level
level
L
H
L
H
IIS
0
nominal
H
H
IIS, lim
H
H
0
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
Z23)
H
L
0
0
0
0
0
VON(Fold back)
if VON>VON(SC), shutdown will occure
L = "Low" Level
H = "High" Level
Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
RON measurement layout
I bb
4
VbIN
l ≤
5.5mm
VON
Vbb
IL
V
3
bb
IN
RIN
OUT
PROFET
IS
5
V
IN
I IN
1,2,6,7
VbIS
VIS
I IS
Vbb force
Out Force Sense
contacts
contacts
(both out
pins parallel)
VOUT
DS
R IS
Typical RON for SMD version is about 0.2 mΩ less
than straight leads due to l ≈ 2 mm
Two or more devices can easily be connected in
parallel to increase load current capability.
) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
) Power Transistor "OFF", potential defined by external impedance.
22
23
Infineon Technologies AG
Page 7
2003-Oct-01
Data Sheet BTS660P
Input circuit (ESD protection)
Current sense status output
V bb
ZD
V
Vbb
R bb
R bb
V
Z,IS
ZD
Z,IN
V bIN
IS
IN
IIS
I
R
IN
VIS
IS
VZ,IS = 74 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
driven only by the internal circuit as long as Vout - VIS >
5
V. If you want measure load currents up to IL(M), RIS
When the device is switched off (IIN = 0) the voltage
Vbb - 5 V
between IN and GND reaches almost Vbb. Use a
should be less than
.
I
L(M) / Kilis
bipolar or MOS transistor with appropriate breakdown
Note: For large values of RIS the voltage VIS can reach
voltage as driver.
almost
Vbb. See also over voltage protection.
VZ,IN = 74 V (typ).
If you don't use the current sense output in your
application, you can leave it open.
V IN
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...300 µs).
Inductive and over voltage output clamp
+ Vbb
VZ1
+ Vbb
V
VON
ON
OUT
OUT
Logic
unit
PROFET
Short circuit
detection
IS
V
OUT
VON is clamped to VON(Cl) = 62 V typ
Infineon Technologies AG
Page 8
2003-Oct-01
Data Sheet BTS660P
Over voltage protection of logic part
+ Vbb
V
R IN
Z,IN
V
IN
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 70 V or
VZb < 42 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
R bb
Z,IS
Vbb disconnect with energized inductive
load
Logic
V OUT
Version a:
PROFET
IS
R IS
V
bb
V
V Z,VIS
RV
IN
bb
PROFET
OUT
Signal GND
Rbb = 120 Ω typ., VZ,IN = VZ,IS = 74 V typ., RIS = 1 kΩ
nominal. Note that when over voltage exceeds 79 V
typ. a voltage above 5V can occur between IS and
GND, if RV, VZ,VIS are not used.
Reverse battery protection
IS
V ZL
Version b:
- Vbb
R bb
V
IN
Vbb
bb
OUT
R IN
IN
PROFET
OUT
Power
Transistor
Logic
IS
IS
DS
D
R IS
V Zb
RL
RV
Signal GND
Power GND
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse
battery protection in applications with Vbb above
16V18);
1
1
1
0.1A
+
+
=
if DS
RIN RIS RV |Vbb| - 12V
1
0.1A
is not used (or
=
if DS is used).
RIN |Vbb| - 12V
To minimize power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 120mA. The current can be provided
by using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through RIS and RV.
recommended value:
Infineon Technologies AG
Version c: Sometimes a necessary voltage clamp is
given by non inductive loads RL connected to the
same switch and eliminates the need of clamping
circuit:
Page 9
V
Vbb
bb
IN
PROFET
RL
OUT
IS
2003-Oct-01
Data Sheet BTS660P
Maximum allowable load inductance for
a single switch off
Inverse load current operation
L = f (IL ); Tj,start = 150°C, Vbb = 40 V, RL = 0 Ω
Vbb
V bb
- IL
IN
+
PROFET
OUT
10000
V OUT +
IS
-
IIS
V IN
V IS
-
R IS
1000
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense
feature is not available during this kind of operation (IIS
= 0). With IIN = 0 (e.g. input open) only the intrinsic
drain source diode is conducting resulting in considerably increased power dissipation. If the device is
switched on (VIN = 0), this power dissipation is
decreased to the much lower value RON(INV) * I2
(specifications see page 4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
100
10
1
10
100
1000
L [µH]
I [A]
E bb
E AS
V
Externally adjustable current limit
ELoad
bb
i L(t)
V bb
IN
PROFET
OUT
IS
I
IN
ZL
RIS
{
L
RL
EL
ER
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC) and the
device is shut down after td(SC) with latch function.
Vbb
Energy stored in load inductance:
V bb
2
EL = 1/2·L·I L
IN
While demagnetizing load inductance, the energy
dissipated in PROFET is
OUT
IS
RV
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
Rload
with an approximate solution for RL > 0 Ω:
IL· L
IL·RL
EAS=
(V + |VOUT(CL)|) ln (1+ |V
)
2·RL bb
OUT(CL)|
Infineon Technologies AG
PROFET
IN
Signal
Page 10
T1
Signal
GND
CV
T2
R IS
Power
GND
2003-Oct-01
Data Sheet BTS660P
Options Overview
Type
BTS
660P
Over temperature protection with hysteresis
Tj >150 °C, latch function24)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
X
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
X
Over voltage shutdown
-
X
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -15 V typ
X
25
X )
) Latch except when V -V
bb
OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
25)
Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
24
Infineon Technologies AG
Page 11
2003-Oct-01
Data Sheet BTS660P
Characteristics
Current sense ratio:
KILIS = f(IL), Tj= 25°C
Current sense versus load current:
IIS = f(IL), TJ= -40 ... +150 °C
IIS [mA]
20000
7
6
18000
5
16000
max
4
max
14000
typ
3
min
12000
2
min
10000
1
0
8000
0
20
40
60
80
0
20
40
60
80
IL [A] kilis
IL [A]
Current sense ratio:
KILIS = f(IL), Tj= -40°C
kilis
Current sense ratio:
KILIS = f(IL), Tj= 150°C
kilis
24000
20000
22000
20000
18000
18000
16000
max
16000
max
14000
typ
14000
typ
12000
min
10000
12000
min
8000
0
20
40
60
80
10000
0
20
40
60
80
IL [A]
IL [A]
Infineon Technologies AG
Page 12
2003-Oct-01
Data Sheet BTS660P
Typ. current limitation characteristic
IL = f (VON, Tj )
Typ. input current
IIN = f (VbIN), VbIN = Vbb - VIN
IIN [mA]
IL [A]
400
1.6
350
1.4
300
1.2
VON>V ON(SC) only for t < t d(SC)
(otherwise immediate shutdown)
250
1.0
200
0.8
150
0.6
0.4
100
T j = -40°C
150°C
25°C
0.2
50
0
0
0
VON(FB)5(Fold Back) 10
15
20
VON [V]
0
20
40
60
80
VbIN [V]
In case of VON > VON(SC) (typ. 6 V) the device will be
switched off by internal short circuit detection.
Typ. on-state resistance
RON = f (Vbb, Tj ); IL = 20 A; VIN = 0
RON [mOhm]
18
static
dynamic
16
14
Tj = 150°C
12
85°C
10
25°C
8
-40°C
6
4
0
5
10
15
40
Vbb [V]
Infineon Technologies AG
Page 13
2003-Oct-01
Data Sheet BTS660P
Timing diagrams
Figure 2c: Switching an inductive load:
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IIN
IIN
VOUT
90%
dV/dtoff
t on
dV/dton
t off
10%
IL
tslc(IS)
Load 1
IIS
VOUT
IL
t slc(IS)
Load 2
IIS
t
tson(IS)
t
t soff(IS)
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 3d: Short circuit:
shut down by short circuit detection, reset by IIN = 0.
Figure 2b: Switching motors and lamps:
IIN
IIN
IL
IL(SCp)
VOUT
td(SC)
IIL
IIS
VOUT>>0
VOUT=0
t
IIS
t
Shut down remains latched until next reset via input.
Sense current saturation can occur at very high
inrush currents (see IIS,lim on page 6).
Infineon Technologies AG
Page 14
2003-Oct-01
Data Sheet BTS660P
Figure 4e: Overtemperature
Reset if Tj
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